IS61C1024-20K Datasheet PDF - Integrated Silicon Solution(ISSI)

●DESCRIPTION

●The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

●When CE1is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

●Easy memory expansion is provided by using two Chip Enable inputs, CE1and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.

●The IS61C1024 and IS61C1024L are available in 32-pin 300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I, 8 x 13.4) packages.

●FEATURES

●• High-speed access time: 12, 15, 20, 25 ns

●• Low active power: 600 mW (typical)

●• Low standby power: 500 µW (typical) CMOS standby

●• Output Enable (OE) and two Chip Enable (CE1and CE2) inputs for ease in applications

●• Fully static operation: no clock or refresh required

●• TTL compatible inputs and outputs

●• Single 5V (±10%) power supply

●• Low power version available: IS61C1024L

●• Commercial and industrial temperature ranges available