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IRLS640A Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220F Rail

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Documentation:

IRLS640A Datasheet (8 Pages)

Package Outline Dimension on7 Page

Part Numbering System on2 Page

IRLS640A Datasheet PDF (8 Pages)

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IRLS640A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

9.80 A

Case/Package

TO-220-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

180 mΩ

Polarity

N-Channel

Power Dissipation

40 W

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

9.80 A

Rise Time

8 ns

Input Capacitance (Ciss)

1705pF @25V(Vds)

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

40W (Tc)

View Datasheet >

IRLS640A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.36 mm

Size-Width

4.9 mm

Size-Height

15.87 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IRLS640A Environmental

IRLS640A Export Classifications

IRLS640A Function Overview

IRLS640A Documents

IRLS640A Datasheet

Fairchild

8 Pages / 0.72 MByte

IRLS640A Other Datasheet PDF

Fairchild

10 Pages / 0.68 MByte

IRLS640 Documents

IRLS640A Datasheet PDF

ON Semiconductor

MOSFET N-CH 200V 9.8A TO-220F

IRLS640A Datasheet PDF

Fairchild

Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220F Rail

IRLS640A Datasheet PDF

Samsung

Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

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