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Part Datasheet Search > MOSFETs > Infineon > IRLHM620TR2PBF Datasheet PDF
IRLHM620TR2PBF
$ 0.69
IRLHM620TR2PBF Datasheet PDF (9 Pages)
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IRLHM620TR2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
3X3-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.002 Ω
Polarity
N-CH
Power Dissipation
2.7 W
Threshold Voltage
800 mV
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
26A
Rise Time
25 ns
Input Capacitance (Ciss)
3620pF @10V(Vds)
Fall Time
37 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)

IRLHM620TR2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLHM620TR2PBF Documents

Infineon
9 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
4 Pages / 0.07 MByte
Infineon
3 Pages / 0.07 MByte

IRLHM620TR2 Documents

International Rectifier
Trans MOSFET N-CH 20V 26A 8Pin PQFN EP T/R
Infineon
PQFN N-CH 20V 26A
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