IRLD120PBF Datasheet PDF - VISHAY

●The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

● Dynamic dV/dt rating

● For automatic insertion

● Repetitive avalanche rated

● End stackable

● Logic-level gate drive

● RDS (ON) Specified at VGS = 4 and 5V

● -55 to 175°C Operating temperature range