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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRLD110PBF Datasheet PDF
IRLD110PBF
$ 0.739
IRLD110PBF Datasheet PDF (9 Pages)
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IRLD110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1300 mW
Drain to Source Voltage (Vds)
100 V
Rise Time
47 ns
Input Capacitance (Ciss)
250pF @25V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.3W (Ta)

IRLD110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLD110PBF Documents

Vishay Siliconix
9 Pages / 1.58 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-10V; VF 2.
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