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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFP448PBF Datasheet PDF
IRFP448PBF
$ 3.486
IRFP448PBF Datasheet PDF (9 Pages)
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IRFP448PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Power Dissipation
180W (Tc)
Drain to Source Voltage (Vds)
500 V
Input Capacitance (Ciss)
1900pF @25V(Vds)
Input Power (Max)
180 W
Power Dissipation (Max)
180W (Tc)

IRFP448PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFP448PBF Documents

Vishay Siliconix
9 Pages / 1.59 MByte

IRFP448 Documents

International Rectifier
MOSFET N-CH 500V 11A TO-247AC
Vishay Siliconix
MOSFET N-CH 500V 11A TO-247AC
VISHAY
MOSFET N-CH 500V 11A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 500V 11A 3Pin(3+Tab) TO-247AC
VISHAY
TO-247-3 N-CH 500V 11A 600mΩ
International Rectifier
MOSFET N-CH 500V 11A TO-247AC
Vishay Siliconix
MOSFET N-CH 500V 11A TO-247AC
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.6Ω; ID 11A; TO-247AC; PD 180W; VGS +/-20V
Vishay Intertechnology
Power Field-Effect Transistor, 11A I(D), 500V, 0.6Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.6Ω; ID 11A; TO-247AC; PD 180W; VGS +/-20V
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