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IRFIBF30G
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IRFIBF30G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Polarity
N-CH
Power Dissipation
35 W
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
1.9A
Rise Time
25 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Input Power (Max)
35 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
35000 mW

IRFIBF30G Documents

VISHAY
8 Pages / 1.44 MByte

IRFIBF30 Documents

VISHAY
TO-220-3 N-CH 900V 1.9A 3.7Ω
VISHAY
TO-220FP N-CH 900V 1.9A
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 3.7Ω; ID 1.9A; TO-220 Full-Pak; PD 35W
Vishay Siliconix
MOSFET N-CH 900V 1.9A TO220FP
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package0
Vishay Siliconix
MOSFET N-CH 900V 1.9A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 900V 1.9A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Vishay Precision Group
MOSFET; Power; N-Ch; VDSS 900V; RDS(ON) 3.7 Ohms; ID 1.9A; TO-220 Full-Pak; PD 35W
IRF
Power MOSFET(Vdss=900V, Rds(on)=3.7Ω, Id=1.9A)
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