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IRFIBE20G
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IRFIBE20G Datasheet PDF (8 Pages)
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IRFIBE20G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
800 V
Current Rating
1.40 A
Polarity
N-Channel
Power Dissipation
30.0 W
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
1.40 A
Rise Time
17.0 ns

IRFIBE20G Documents

International Rectifier
8 Pages / 1.49 MByte

IRFIBE20 Documents

VISHAY
TO-220-3 N-CH 800V 1.4A 6.5Ω
International Rectifier
MOSFET N-CH 800V 1.4A TO220FP
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Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 6.5Ω; ID 1.4A; TO-220 Full-Pak; PD 30W
Vishay Siliconix
MOSFET N-CH 800V 1.4A TO220FP
Vishay Siliconix
MOSFET N-CH 800V 1.4A TO220FP
Vishay Intertechnology
Power Field-Effect Transistor, 1.4A I(D), 800V, 6.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Vishay Semiconductor
Trans MOSFET N-CH 800V 1.4A 3Pin(3+Tab) TO-220FP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 6.5Ω; ID 1.4A; TO-220 Full-Pak; PD 30W
IRF
Power MOSFET(Vdss=800V, Rds(on)=6.5Ω, Id=1.4A)
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