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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFIBC30GPBF Datasheet PDF
IRFIBC30GPBF
$ 1.716

IRFIBC30GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
35000 mW
Drain to Source Voltage (Vds)
600 V
Rise Time
13 ns
Input Capacitance (Ciss)
660pF @25V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
35W (Tc)

IRFIBC30GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFIBC30GPBF Documents

Vishay Siliconix
10 Pages / 0.26 MByte
Vishay Siliconix
8 Pages / 0.9 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFIBC30 Documents

International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2Ω, ID = 2.5A
IRF
Power MOSFET(Vdss=600V, Rds(on)=2.2Ω, Id=2.5A)
VISHAY
TO-220-3 N-CH 600V 2.5A 2.2Ω
Vishay Siliconix
MOSFET N-CH 600V 2.5A TO220FP
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 2.2Ω; ID 2.5A; TO-220 Full-Pak; PD 35W
International Rectifier
MOSFET N-CH 600V 2.5A TO220FP
International Rectifier
MOSFET N-CH 600V 2.5A TO220FP
Vishay Siliconix
MOSFET N-CH 600V 2.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 600V 2.5A 3Pin(3+Tab) TO-220FP
Vishay Intertechnology
Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPACK-3
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