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Part Datasheet Search > MOSFETs > Infineon > IRFHM830TR2PBF Datasheet PDF
IRFHM830TR2PBF
$ 0.749
IRFHM830TR2PBF Datasheet PDF (9 Pages)
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IRFHM830TR2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
3X3-8
Drain to Source Resistance (on) (Rds)
0.003 Ω
Polarity
N-CH
Power Dissipation
2.7 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
21A
Rise Time
25 ns
Input Capacitance (Ciss)
2155pF @25V(Vds)
Fall Time
9.2 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)

IRFHM830TR2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFHM830TR2PBF Documents

Infineon
9 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
13 Pages / 0.25 MByte
Infineon
5 Pages / 0.1 MByte

IRFHM830TR2 Documents

International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin PQFN EP T/R
Infineon
PQFN N-CH 30V 21A
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