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IRFF9210PBF
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IRFF9210PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-39
Polarity
P-CH
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
1.6A

IRFF9210PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

IRFF9210PBF Documents

Infineon
7 Pages / 0.83 MByte

IRFF9210 Documents

International Rectifier
Trans MOSFET P-CH 200V 1.6A 3Pin TO-39
Infineon
Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Semelab
1.5A, 200V, 3.45ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
TT Electronics Resistors
Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
IRF
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
New Jersey Semiconductor
Infineon
TO-39P-CH 200V 1.6A
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