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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFDC20PBF Datasheet PDF
IRFDC20PBF
$ 0.971
IRFDC20PBF Datasheet PDF (9 Pages)
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IRFDC20PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1W (Ta)
Input Capacitance (Ciss)
350pF @25V(Vds)
Power Dissipation (Max)
1W (Ta)

IRFDC20PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFDC20PBF Documents

Vishay Siliconix
9 Pages / 1.15 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFDC20 Documents

Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Semiconductor
MOSFET N-CH 600V 320mA 4-DIP
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
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