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Part Datasheet Search > MOSFETs > Infineon > IRF9332TRPBF Datasheet PDF
IRF9332TRPBF
Part 3D Model
$ 0.154
IRF9332TRPBF Datasheet PDF (8 Pages)
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IRF9332TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0136 Ω
Polarity
P-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9.8A
Rise Time
47 ns
Input Capacitance (Ciss)
1270pF @25V(Vds)
Fall Time
58 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF9332TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF9332TRPBF Documents

Infineon
8 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte

IRF9332 Documents

Infineon
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 9.8A
Infineon
SOIC P-CH 30V 9.8A
International Rectifier
Trans MOSFET P-CH 30V 9.8A 8Pin SOIC N Tube
International Rectifier
Trans MOSFET P-CH 30V 9.8A 8Pin SOIC N T/R
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