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Part Datasheet Search > Transistors > Infineon > IRF7507TR Datasheet PDF
IRF7507TR
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IRF7507TR Datasheet PDF (8 Pages)
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IRF7507TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Current Rating
2.40 A
Case/Package
TSSOP-8
Drain to Source Resistance (on) (Rds)
270 mΩ
Polarity
N-Channel, P-Channel
Power Dissipation
1.25 W
Part Family
IRF7507
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Continuous Drain Current (Ids)
2.40 A
Input Capacitance (Ciss)
260pF @15V(Vds)
Input Power (Max)
1.25 W

IRF7507TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7507TR Documents

Infineon
8 Pages / 0.21 MByte
Infineon
5 Pages / 0.11 MByte

IRF7507 Documents

International Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N+P 20V 2.4A/1.7A
IRF
Power MOSFET(Vdss=+-20V)
Infineon
Micro N+P 20V 2.4A/1.7A
International Rectifier
Trans MOSFET N/P-CH 20V 2.4A/1.7A 8Pin Micro T/R
Infineon
Micro N+P 20V 2.4A/1.7A
Infineon
Micro N+P 20V 2.4A/1.7A
International Rectifier
MOSFET N/P-CH 20V MICRO8
International Rectifier
Trans MOSFET N/P-CH 20V 2.4A/1.7A 8Pin Micro
IFC
Dual N/P-Channel ±20V 135mΩ / 270mΩ 5.3/5.4NC SMT Hexfet Power Mosfet -MICRO-8
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