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Part Datasheet Search > MOSFETs > Infineon > IRF6726MTR1PBF Datasheet PDF
IRF6726MTR1PBF
$ 15.11
IRF6726MTR1PBF Datasheet PDF (9 Pages)
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IRF6726MTR1PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
89 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.0013 Ω
Polarity
N-CH
Power Dissipation
2.8 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
32A
Rise Time
30 ns
Input Capacitance (Ciss)
6140pF @15V(Vds)
Input Power (Max)
2.8 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF6726MTR1PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
5.45 mm
Size-Width
5.05 mm
Size-Height
0.6 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6726MTR1PBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
37 Pages / 2.01 MByte

IRF6726MTR1 Documents

Infineon
Direct-FET N-CH 30V 32A
International Rectifier
Trans MOSFET N-CH 30V 32A 7Pin Direct-FET MT T/R
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