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Part Datasheet Search > MOSFETs > Infineon > IRF6620TR1 Datasheet PDF
IRF6620TR1
$ 5.847
IRF6620TR1 Datasheet PDF (9 Pages)
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IRF6620TR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Voltage Rating (DC)
20.0 V
Current Rating
27.0 A
Case/Package
DirectFET? Isometric MX
Drain to Source Resistance (on) (Rds)
0.0021 Ω
Polarity
N-Channel
Power Dissipation
2.8 W
Part Family
IRF6620
Threshold Voltage
2.45 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Continuous Drain Current (Ids)
22.0 A
Rise Time
80.0 ns
Input Capacitance (Ciss)
4130pF @10V(Vds)
Input Power (Max)
2.8 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF6620TR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6620TR1 Documents

Infineon
9 Pages / 0.22 MByte
Infineon
1 Pages / 0.06 MByte

IRF6620 Documents

International Rectifier
Trans MOSFET N-CH 20V 27A 7Pin Direct-FET MX
Infineon
Direct-FET N-CH 20V 27A
Infineon
Direct-FET N-CH 20V 27A
Infineon
Direct-FET N-CH 20V 27A
International Rectifier
Single N-Channel 20V 2.8W 42NC SMT Power MosFet - DirectFETIsometric MX
International Rectifier
Trans MOSFET N-CH 20V 27A 7Pin Direct-FET MX T/R
International Rectifier
Trans MOSFET N-CH 20V 27A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 20V 27A
Infineon
Trans MOSFET N-CH 20V 27A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 20V 27A
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