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Part Datasheet Search > Infineon > IPS80R1K2P7AKMA1 Datasheet PDF
IPS80R1K2P7AKMA1
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IPS80R1K2P7AKMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1 Ω
Power Dissipation
37 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
800 V
Rise Time
8 ns
Input Capacitance (Ciss)
300pF @500V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
37W (Tc)

IPS80R1K2P7AKMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPS80R1K2P7AKMA1 Documents

Infineon
13 Pages / 0.94 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte

IPS80R1K2P7 Documents

Infineon
A new benchmark in efficiency and thermal performance
Infineon
Mosfet n-Ch 800V Coolmos To251-3
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