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Part Datasheet Search > MOSFETs > Infineon > IPP200N15N3 G Datasheet PDF
IPP200N15N3 G
$ 0.414
IPP200N15N3 G Datasheet PDF (12 Pages)
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IPP200N15N3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
16 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
150 V
Rise Time
11 ns
Input Capacitance (Ciss)
1820pF @75V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150 W

IPP200N15N3 G Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.36 mm
Size-Width
4.4 mm
Size-Height
15.95 mm
Operating Temperature
-55℃ ~ 175℃

IPP200N15N3 G Documents

Infineon
12 Pages / 0.97 MByte
Infineon
5 Pages / 0.05 MByte

IPP200N15N3 Documents

Infineon
TO-220 N-CH 150V 50A
Infineon
OptiMOS„3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Infineon
The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
TO-220 N-CH 150V 50A
Infineon
TO-220 N-CH 150V 50A
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