IPP023NE7N3GXKSA1 Datasheet PDF - Infineon

●The IPP023NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.

● World"s lowest RDS (ON)

● Very low Qg and Qgd

● Excellent gate charge x RDS (ON) product (FOM)

● MSL1 rated

● Increased efficiency

● Highest power density

● Less paralleling required

● Smallest board-space consumption

● Easy-to-design products

● Ideal for high frequency switching and DC-to-DC converters

● Normal level

● 100% avalanche tested

● Qualified according to JEDEC for target applications

● Green device