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Part Datasheet Search > MOSFETs > Infineon > IPD60R750E6ATMA1 Datasheet PDF
IPD60R750E6ATMA1
$ 1.511
IPD60R750E6ATMA1 Datasheet PDF (17 Pages)
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IPD60R750E6ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
680 mΩ
Polarity
N-CH
Power Dissipation
48 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
5.7A
Rise Time
7 ns
Input Capacitance (Ciss)
373pF @100V(Vds)
Input Power (Max)
48 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48W (Tc)

IPD60R750E6ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD60R750E6ATMA1 Documents

Infineon
17 Pages / 1.15 MByte
Infineon
17 Pages / 2.05 MByte

IPD60R750E6 Documents

Infineon
DPAK N-CH 600V 5.7A
Infineon
DPAK N-CH 600V 5.7A
Infineon
DPAK N-CH 600V 5.7A
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