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Part Datasheet Search > High Voltage MOS > Infineon > IPD60R600CP Datasheet PDF
IPD60R600CP
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IPD60R600CP Datasheet PDF (10 Pages)
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IPD60R600CP Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
60 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
6.10 A
Rise Time
12 ns
Input Capacitance (Ciss)
550pF @100V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
60000 mW

IPD60R600CP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃

IPD60R600CP Documents

Infineon
10 Pages / 0.71 MByte
Infineon
10 Pages / 0.3 MByte
Infineon
6 Pages / 1.89 MByte

IPD60R600 Documents

Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 650V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 6.1A
Infineon
Mosfet n-Ch 650V 6A To252-3
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Infineon
N-CH 600V 7.3A
Infineon
Trans MOSFET N-CH 600V 6A T/R
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