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Part Datasheet Search > MOSFETs > Infineon > IPD50R500CEATMA1 Datasheet PDF
IPD50R500CEATMA1
$ 0.269
IPD50R500CEATMA1 Datasheet PDF (2 Pages)
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IPD50R500CEATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
57 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
N-CH
Power Dissipation
57 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
7.6A
Rise Time
5 ns
Input Capacitance (Ciss)
433pF @100V(Vds)
Input Power (Max)
57 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
57W (Tc)

IPD50R500CEATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD50R500CEATMA1 Documents

Infineon
2 Pages / 0.94 MByte
Infineon
3 Pages / 0.15 MByte
Infineon
20 Pages / 0.75 MByte

IPD50R500 Documents

Infineon
N-CH 500V 7.6A
Infineon
DPAK N-CH 500V 7.6A
Infineon
DPAK N-CH 500V 7.6A
Infineon
DPAK N-CH 500V 7.6A
Infineon
Trans MOSFET N-CH 550V 7.6A 3Pin TO-252 T/R
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