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IPB042N10N3GE8187ATMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-263-3

Description:

Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IPB042N10N3GE8187ATMA1 Datasheet (11 Pages)

IPB042N10N3GE8187ATMA1 Datasheet PDF (11 Pages)

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IPB042N10N3GE8187ATMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Power Dissipation

214W (Tc)

Drain to Source Voltage (Vds)

100 V

Rise Time

59 ns

Input Capacitance (Ciss)

8410pF @50V(Vds)

Input Power (Max)

214 W

Fall Time

14 ns

Power Dissipation (Max)

214W (Tc)

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IPB042N10N3GE8187ATMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IPB042N10N3GE8187ATMA1 Environmental

IPB042N10N3GE8187ATMA1 Function Overview

IPB042N10N3GE8187ATMA1 Documents

IPB042N10N3GE8187ATMA1 Datasheet

Infineon

11 Pages / 0.73 MByte

IPB042N10N3GE8187ATMA1 Other Datasheet PDF

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65 Pages / 1.7 MByte

IPB042N10N3GE8187 Documents

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Infineon

MOSFET N-CH 100V 100A TO263-3

IPB042N10N3GE8187ATMA1 Datasheet PDF

Infineon

Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R

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