IPA60R099C6XKSA1 Datasheet PDF - Infineon

●The IPA60R099C6 is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ C6 combines Infineon"s experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

● Easy control of switching behaviour

● Extremely low losses due to very low Figure of Merit (RDS (ON) x Qg and Eoss)

● Very high commutation ruggedness

● Easy to use

● Better light load efficiency compared to C3

● Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

● Better performance in comparison to previous CoolMOS™ generations

● More efficient, more compact, lighter and cooler

● Improved power density

● Improved reliability

● Better light load efficiency

● General purpose part can be used in both soft and hard switching topologies

● Improved efficiency in hard switching applications

● Reduces possible ringing due to PCB layout and package parasitic effects