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Part Datasheet Search > Infineon > IKA08N65ET6XKSA1 Datasheet PDF
IKA08N65ET6XKSA1
$ 0.478

IKA08N65ET6XKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
33 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
43 ns
Input Power (Max)
33 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
33000 mW

IKA08N65ET6XKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 175℃ (TJ)

IKA08N65ET6XKSA1 Documents

Infineon
16 Pages / 1.99 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IKA08N65ET6 Documents

Infineon
Discrete 650V TRENCHSTOP™ IGBT6 with soft, fast recovery anti-parallel Rapid diode
Infineon
Transistor: IGBT; 650V; 7A; 17W; TO220FP; TRENCHSTOP™ 6; Series: T6
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