HN58V66AT-10 Datasheet PDF - Renesas Electronics

●Description

●Renesas Technology"s HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high relisbility by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.

●Features

●• Single supply: 2.7 to 5.5 V

●• Access time:

● - 100 ns (max) at 2.7 V ≤ VCC < 4.5 V

● - 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V

●• Power dissipation:

●• Active: 20 mW/MHz (typ)

●• Standby: 110 µW (max)

●• On-chip latches: address, data, CE, OE, WE

●• Automatic byte write: 10 ms (max)

●• Automatic page write (64 bytes): 10 ms (max)

●• Ready/Busy

●• Data polling and Toggle bit

●• Data protection circuit on power on/off

●• Conforms to JEDEC byte-wide standard

●• Reliable CMOS with MNOS cell technology

●• 105 erase/write cycles (in page mode)

●• 10 years data retention

●• Software data protection

●• Write protection by RES pin (only the HN58V66A series)

●• Industrial versions (Temperatur range: −20 to 85°C and −40 to 85°C) are also available.

●• There are also lead free products.