HMC902LP3ETR Datasheet PDF - ADI

●Product Details

●The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface mount package. The amplifier operates between 5 GHz and 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply.

●The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image reject mixers. The HMC902LP3E also features inputs/outputs that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications.

●Applications

● Point to point radios

● Point to multi point radios

● Military and space

● Test instrumentation

●### Features and Benefits

● Low noise figure: 1.8 dB typical

● High gain: 19.5 dB

● High P1dB output power: 16 dBm typical

● Single supply: 3.5 V at 80 mA

● Output IP3: 28 dBm

● 50 Ω matched input/output

● Self biased with optional bias control for quiescent drain control (IDQ) reduction.

● 3 mm × 3 mm, 16-lead frame chip scale (LFCSP) package: 9 mm²