HGTP10N50E1D Datasheet PDF - Intersil

●Description

●The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits

●Features

●• 10A, 400V and 500V

●• VCE(ON): 2.5V Max.

●• TFALL: 1µs, 0.5µs

●• Low On-State Voltage

●• Fast Switching Speeds

●• High Input Impedance

●• Anti-Parallel Diode

●Applications

●• Power Supplies

●• Motor Drives

●• Protective Circuits