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Part Datasheet Search > Infineon > FS75R12KE3B9BOSA1 Datasheet PDF
FS75R12KE3B9BOSA1
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FS75R12KE3B9BOSA1 Datasheet PDF (1 Pages)
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FS75R12KE3B9BOSA1 Specifications

TYPE
DESCRIPTION
Number of Pins
26 Pin
Case/Package
AG-ECONO2-6
Power Dissipation
355000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
5.3nF @25V
Input Power (Max)
355 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
355000 mW

FS75R12KE3B9BOSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 125℃

FS75R12KE3B9BOSA1 Documents

Infineon
1 Pages / 0.03 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte

FS75R12KE3B9 Documents

Infineon
Trans IGBT Module N-CH 1.2kV 105A 26Pin
Infineon
Trans IGBT Module N-CH 1200V 105A 355000mW 26Pin ECONO2-6 Tray
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