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Part Datasheet Search > Infineon > FS50R12W2T4B11BOMA1 Datasheet PDF
FS50R12W2T4B11BOMA1
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FS50R12W2T4B11BOMA1 Datasheet PDF (1 Pages)
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FS50R12W2T4B11BOMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
17 Pin
Case/Package
AG-EASY2B-2
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
2.8nF @25V
Input Power (Max)
335 W

FS50R12W2T4B11BOMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Operating Temperature
-40℃ ~ 150℃

FS50R12W2T4B11BOMA1 Documents

Infineon
1 Pages / 0.07 MByte
Infineon
1 Pages / 0.07 MByte
Infineon
33 Pages / 2.24 MByte

FS50R12W2T4B11 Documents

Infineon
INFINEON FS50R12W2T4_B11 IGBT Array & Module Transistor, N Channel, 50A, 1.85V, 335W, 1.2kV, Module
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EasyPACK™ 2B 1200V / 50A sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology
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