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FQD13N10TM
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FQD13N10TM Datasheet PDF (10 Pages)
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FQD13N10TM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.142 Ω
Power Dissipation
40 W
Threshold Voltage
4 V
Input Capacitance
345 pF
Drain to Source Voltage (Vds)
100 V
Rise Time
55 ns
Input Capacitance (Ciss)
345pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

FQD13N10TM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.6 mm
Size-Width
6.1 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃

FQD13N10TM Documents

ON Semiconductor
10 Pages / 0.94 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
7 Pages / 0.87 MByte

FQD13N10 Documents

Fairchild
FQD13N10 N-Channel QFET MOSFET 100V, 10A, 180mΩ
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, DPAK, 2500-REEL
Fairchild
Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
N-Channel QFET® MOSFET 100V, 10A, 180mΩ
ON Semiconductor
MOSFET N-CH 100V 10A DPAK
Fairchild
Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) DPAK T/R
Fairchild
MOSFET N-CH 100V 10A DPAK
Fairchild
Trans MOSFET N-CH 100V 10A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
MOSFET N-CH 100V 10A DPAK
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