FDG6308P Datasheet PDF - Fairchild

●General Description

●This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

●Features

●• –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V

●                     RDS(ON)= 0.55 Ω@ VGS= –2.5 V

●                     RDS(ON)= 0.80 Ω@ VGS= –1.8 V

●•Low gate charge

●• High performance trench technology for extremely low RDS(ON)

●• Compact industry standard SC70-6 surface mount package

●Applications

●•Battery management

●•Load switch