CY7C1360B-166BZI Datasheet PDF - Cypress Semiconductor

●Functional Description

●The CY7C1360B/CY7C1362B SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2and CE3 [2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

●Features

●• Supports bus operation up to 225 MHz

●• Available speed grades are 225, 200 and 166 MHz

●• Registered inputs and outputs for pipelined operation

●• 3.3V core power supply

●• 2.5V/3.3V I/O operation

●• Fast clock-to-output times

●  — 2.8 ns (for 225-MHz device)

●  — 3.0 ns (for 200-MHz device)

●  — 3.5 ns (for 166-MHz device)

●• Provide high-performance 3-1-1-1 access rate

●• User-selectable burst counter supporting Intel Pentium® interleaved or linear burst sequences

●• Separate processor and controller address strobes

●• Synchronous self-timed writes

●• Asynchronous output enable

●• Single Cycle Chip Deselect

●• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA and 165-Ball fBGA packages

●• TQFP Available with 3-Chip Enable and 2-Chip Enable

●• IEEE 1149.1 JTAG-Compatible Boundary Scan

●• “ZZ” Sleep Mode Option