$ 702.103

BSM180D12P3C007 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

Transistors

Case Package:

Module

Description:

Trans MOSFET N-CH SiC 1.2kV 180A Automotive 10Pin Tray

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BSM180D12P3C007 Datasheet PDF (12 Pages)

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BSM180D12P3C007 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

10 Pin

Case/Package

Module

Number of Channels

2 Channel

Power Dissipation

880 W

Threshold Voltage

2.7 V

Drain to Source Voltage (Vds)

1200 V

Breakdown Voltage (Drain to Source)

1200 V

Rise Time

70 ns

Input Capacitance (Ciss)

900pF @10V(Vds)

Input Power (Max)

880 W

Fall Time

50 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

40 ℃

Power Dissipation (Max)

880000 mW

BSM180D12P3C007 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tray

Operating Temperature

175℃ (TJ)

BSM180D12P3C007 Environmental

BSM180D12P3C007 Export Classifications

BSM180D12P3C007 Function Overview

BSM180D12P3C007 Documents

BSM180D12P3C007 Other Datasheet PDF

ROHM Semiconductor

12 Pages / 0.89 MByte

BSM180D12P3C007 Features Description Parametrics

ROHM Semiconductor

3 Pages / 0.24 MByte

BSM180D12P3 Documents

BSM180D12P3C007 Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH SiC 1.2kV 180A Automotive 10Pin Tray

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