$ 310.412

BSM080D12P2C008 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

Transistors

Description:

Trans MOSFET N-CH SiC 1.2kV 80A 10Pin Tray

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Documentation:

BSM080D12P2C008 Datasheet (12 Pages)

BSM080D12P2C008 Specifications

TYPE

DESCRIPTION

Number of Pins

10 Pin

Power Dissipation

600 W

Drain to Source Voltage (Vds)

1200 V

Rise Time

30 ns

Input Capacitance (Ciss)

800pF @10V(Vds)

Input Power (Max)

600 W

Fall Time

40 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

600000 mW

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BSM080D12P2C008 Datasheet

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12 Pages / 1.71 MByte

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BSM080D12P2C008 Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH SiC 1.2kV 80A 10Pin Tray

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