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Part Datasheet Search > BJTs > Infineon > BFP540H6327XTSA1 Datasheet PDF
BFP540H6327XTSA1
$ 0.222
BFP540H6327XTSA1 Datasheet PDF (10 Pages)
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BFP540H6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-343-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
250 mW
Input Capacitance
0.65 pF
Breakdown Voltage (Collector to Emitter)
5 V
Gain
16 dB
hFE Min
50 @20mA, 3.5V
Input Power (Max)
250 mW
DC Current Gain (hFE)
50
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
250 mW

BFP540H6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
150℃ (TJ)

BFP540H6327XTSA1 Documents

Infineon
10 Pages / 0.55 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
11 Pages / 0.55 MByte
Infineon
10 Pages / 0.67 MByte
Infineon
1 Pages / 0.13 MByte

BFP540H6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 4.5V; 80mA; 0.25W(1/4W); SOT343
Infineon
INFINEON BFP 540 H6327 Bipolar - RF Transistor, NPN, 4.5V, 30GHz, 0.25W(1/4W), 80mA, 50
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin(3+Tab) SOT-343 T/R
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