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Part Datasheet Search > BJTs > Infineon > BFP193WH6327XTSA1 Datasheet PDF
BFP193WH6327XTSA1
$ 0.049
BFP193WH6327XTSA1 Datasheet PDF (6 Pages)
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BFP193WH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
8000 MHz
Number of Pins
4 Pin
Case/Package
SOT-343-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
580 mW
Input Capacitance
2.25 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
13.5dB ~ 20.5dB
hFE Min
70 @30mA, 8V
Input Power (Max)
580 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
580 mW

BFP193WH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.8 mm
Operating Temperature
150℃ (TJ)

BFP193WH6327XTSA1 Documents

Infineon
6 Pages / 0.51 MByte
Infineon
6 Pages / 0.51 MByte
Infineon
1 Pages / 0.13 MByte

BFP193WH6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 20V; 80mA; 580mW; SOT343
Infineon
INFINEON BFP 193W H6327 Bipolar - RF Transistor, NPN, 12V, 8GHz, 580mW, 80mA, 70
Infineon
NPN RF-Trans. 12V 80mA SOT343 **
Infineon
Trans RF BJT NPN 12V 0.08A 4Pin(3+Tab) SOT-343 T/R
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