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BFG135,115 Datasheet PDF - NXP

Manufacturer:

NXP

Category:

BJTs

Case Package:

TO-261-4

Description:

RF Bipolar Transistors NPN 150mA 15V 7GHz

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Documentation:

BFG135,115 Datasheet (17 Pages)

BFG135,115 Datasheet PDF (17 Pages)

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BFG135,115 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Frequency

7000 MHz

Number of Pins

3 Pin

Case/Package

TO-261-4

Polarity

NPN

Power Dissipation

1000 mW

Gain Bandwidth Product

7000 MHz

Breakdown Voltage (Collector to Emitter)

15 V

hFE Min

80 @100mA, 10V

hFE Max

Input Power (Max)

1 W

DC Current Gain (hFE)

130

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

1000 mW

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BFG135,115 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

6.7 mm

Size-Width

3.7 mm

Size-Height

1.7 mm

Operating Temperature

175℃ (TJ)

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BFG135,115 Environmental

BFG135,115 Function Overview

BFG135,115 Documents

BFG135,115 Datasheet

NXP

17 Pages / 0.12 MByte

BFG135,115 Other Datasheet PDF

NXP

39 Pages / 0.75 MByte

BFG135,115 Notice File

NXP

72 Pages / 3.63 MByte

BFG135,115 Other References

NXP

1 Pages / 0.13 MByte

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