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Part Datasheet Search > BJTs > ON Semiconductor > BC857CWT1G Datasheet PDF
BC857CWT1G
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$ 0.016
BC857CWT1G Datasheet PDF (6 Pages)
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BC857CWT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
SC-70-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
150 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
420 @2mA, 5V
Input Power (Max)
150 mW
DC Current Gain (hFE)
420
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-50 ℃
Power Dissipation (Max)
150 mW

BC857CWT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.2 mm
Size-Width
1.35 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC857CWT1G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
11 Pages / 0.1 MByte

BC857CWT1 Documents

ON Semiconductor
SC-70 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-70, 3 PIN
ON Semiconductor
SC-70 PNP 45V 0.1A
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-70, 3 PIN
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