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Part Datasheet Search > BJTs > ON Semiconductor > BC307B Datasheet PDF
BC307B
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BC307B Datasheet PDF (4 Pages)
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BC307B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
TO-92-3
Power Dissipation
350 mW
Gain Bandwidth Product
280 MHz
Breakdown Voltage (Collector to Emitter)
45 V
hFE Min
200 @2mA, 5V
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
350 mW

BC307B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC307B Documents

ON Semiconductor
4 Pages / 0.05 MByte
ON Semiconductor
31 Pages / 0.08 MByte

BC307 Documents

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Trans GP BJT PNP 45V 0.1A 3Pin TO-92 Bulk
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EPITAXIAL PLANAR PNP TRANSISTOR
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TO-92 PNP 45V 100mA
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Continental Device
0.35W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.1A Ic, 120 - 800 hFE@
Micro Electronics
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Philips
PNP general purpose transistors
New Jersey Semiconductor
Trans GP BJT PNP 45V 0.1A 3Pin TO-92 Bulk
Usha
Transistors
DC Components
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
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