AUIRF7343Q Datasheet PDF - Infineon

●The AUIRF7343Q is a dual N/P-channel MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this MOSFET is 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in wide variety of applications. The efficient package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface-mount can dramatically reduce board space.

● Advanced planar technology

● Ultra low ON-resistance

● Logic level gate drive

● Surface-mount device