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2SK3666-4-TB-E Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

JFETs

Case Package:

SOT-23-3

Description:

JFET N-CH 30V 10mA 200mW CP

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2SK3666-4-TB-E Datasheet PDF (6 Pages)

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2SK3666-4-TB-E Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

200 Ω

Power Dissipation

200 mW

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Reverse Breakdown Voltage

30 V

Input Capacitance (Ciss)

4pF @10V(Vds)

Input Power (Max)

200 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

200 mW

2SK3666-4-TB-E Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Height

1.1 mm

Operating Temperature

150℃ (TJ)

2SK3666-4-TB-E Environmental

2SK3666-4-TB-E Function Overview

2SK3666-4-TB-E Documents

2SK3666-4-TB-E Other Datasheet PDF

ON Semiconductor

6 Pages / 0.38 MByte

2SK36664 Documents

2SK3666-4-TB-E Datasheet PDF

ON Semiconductor

JFET N-CH 30V 10mA 200mW CP

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