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Part Datasheet Search > BJTs > California Eastern Laboratories > 2SC5010-A Datasheet PDF
2SC5010-A
$ 0.939
2SC5010-A Datasheet PDF (9 Pages)
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2SC5010-A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-523
Power Dissipation
125 mW
Breakdown Voltage (Collector to Emitter)
6 V
Gain
8.5 dB
hFE Min
75 @10mA, 3V
Input Power (Max)
125 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125 mW

2SC5010-A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

2SC5010-A Documents

California Eastern Laboratories
9 Pages / 1.58 MByte
California Eastern Laboratories
7 Pages / 0.21 MByte

2SC5010 Documents

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NPN SILICON EPITAXIAL TRANSISTOR 3Pins ULTRA SUPER MINI MOLD
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Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold
California Eastern Laboratories
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
NEC
NPN SILICON EPITAXIAL TRANSISTOR 3Pins ULTRA SUPER MINI MOLD
Renesas Electronics
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
California Eastern Laboratories
Trans RF BJT NPN 6V 0.03A T/R
NEC
NPN SILICON EPITAXIAL TRANSISTOR 3Pins ULTRA SUPER MINI MOLD
Renesas Electronics
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
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