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Part Datasheet Search > BJTs > ON Semiconductor > 2N6517CTA Datasheet PDF
2N6517CTA
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2N6517CTA Datasheet PDF (10 Pages)
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2N6517CTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
200 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Power Dissipation
0.625 W
Breakdown Voltage (Collector to Emitter)
350 V
hFE Min
20 @50mA, 10V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
625 mW

2N6517CTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Size-Length
4.58 mm
Size-Width
3.86 mm
Size-Height
4.58 mm
Operating Temperature
150℃ (TJ)

2N6517CTA Documents

ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
10 Pages / 0.18 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N6517 Documents

ON Semiconductor
Bipolar Transistors - BJT 500mA 350V NPN
CJ
TO-92 NPN 350V 500mA
Samsung
Trans GP BJT NPN 350V 0.5A 3Pin TO-92
Fairchild
NPN TR 350V/0.5A/625mW/200MHz
Central Semiconductor
Trans GP BJT NPN 350V 0.5A 3Pin TO-92
Motorola
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA
Micro Commercial Components
High Voltage Transistor 625mW
Diodes
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, 3 PIN
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.5A Ic, 20 - hFEl
Vishay Semiconductor
Bipolar Transistors - BJT
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