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Part Datasheet Search > BJTs > ON Semiconductor > 2N6111G Datasheet PDF
2N6111G
$ 0.676
2N6111G Datasheet PDF (5 Pages)
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2N6111G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
10 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-7.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
40 W
Gain Bandwidth Product
10 MHz
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
7A
hFE Min
30 @3A, 4V
hFE Max
150
Input Power (Max)
40 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40 W

2N6111G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

2N6111G Documents

ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
16 Pages / 0.79 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

2N6111 Documents

ST Microelectronics
Trans GP BJT PNP 30V 7A 3Pin(3+Tab) TO-220 Tube
ON Semiconductor
TO-220-3 PNP 30V 7A
Mospec
POWER TRANSISTORS(7A,40W)
Central Semiconductor
Trans GP BJT PNP 30V 7A 3Pin (3+Tab) TO-220 Box
Continental Device
40W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7A Ic, 30 - 150 hFE.
Motorola
7A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, CASE 221A-06, 3 PIN
Advanced Semiconductor
Power Bipolar Transistor, 7A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Microsemi
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin,
TI
30V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
New Jersey Semiconductor
Trans GP BJT PNP 30V 7A 3Pin(3+Tab) TO-220 BoxO
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