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Part Datasheet Search > BJTs > ON Semiconductor > 2N5770 Datasheet PDF
2N5770
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2N5770 Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
Trans RF BJT NPN 15V 0.05A 3Pin TO-92 Bulk
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Documentation:
2N5770 Datasheet (2 Pages)

2N5770 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-226-3
Power Dissipation
350 mW
Input Capacitance
2pF (Max)
Breakdown Voltage (Collector to Emitter)
15 V
Gain
15 dB
hFE Min
50 @8mA, 10V
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350 mW
View Datasheet >

2N5770 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

2N5770 Documents

2N5770 Datasheet
ON Semiconductor
2 Pages / 0.04 MByte
2N5770 Other Datasheet PDF
ON Semiconductor
7 Pages / 0.28 MByte
2N5770 Other References
ON Semiconductor
1 Pages / 0.15 MByte
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