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2N5462G
$ 0.195
2N5462G Datasheet PDF (5 Pages)
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2N5462G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-40.0 V
Current Rating
100 mA
Case/Package
TO-226-3
Polarity
P-Channel
Power Dissipation
350 mW
Input Capacitance
7.00 pF
Drain to Source Voltage (Vds)
40.0 V
Breakdown Voltage (Gate to Source)
40.0 V
Reverse Breakdown Voltage
40 V
Input Capacitance (Ciss)
7pF @15V(Vds)
Input Power (Max)
350 mW
Operating Temperature (Max)
135 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
350 mW

2N5462G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Height
5.33 mm
Operating Temperature
-65℃ ~ 135℃ (TJ)

2N5462G Documents

ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.12 MByte

2N5462 Documents

ON Semiconductor
JFET P-CH 40V 0.35W TO92
Fairchild
JFET P-CH 40V 0.35W TO92
Vishay Siliconix
Trans JFET P-CH 3Pin TO-226AA
Motorola
CASE 2904, STYLE 7 TO92 (TO226AA)
Central Semiconductor
Trans JFET P-CH Si 3Pin TO-92
Intersil
N-CHANNEL JFET
Vishay Semiconductor
VISHAY 2N5462 JFET Transistor, Junction Field Effect, 40V, -4mA, -16mA, 9V, TO-226AA, JFET
TI
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
Solitron Devices
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,
InterFET
P-Channel silicon junction field-effect transistor
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